Modeling and simulation of single-electron transistors

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Modeling and simulation of single-electron transistors

Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the...

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Bibliographic Details
Main Authors:	Lee, Jia Yen, Mat Isa, Ahmad Radzi, Ahmad Dasuki, Karsono
Format:	Article
Language:	English
Published:	Ibnu Sina Institute for Fundamental Science Studies 2005
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/434/ http://eprints.utm.my/434/1/jfs001006.pdf

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