Investigation on the properties of SnxSb10Se90-x chalcogenide semiconductor
Studies on tin-antimony-selenium (TAS) system of SnxSb10Se90-x (x= 0, 5, 10, 12.5, 15, 20 and 30) have been carried out using XRD, XGT and DTA and density measurement, so as to elucidate the structural states and thermal properties. XRD analysis for x= 0, 5, 10 and 12.5 gave an indicative amorphous...
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| Format: | Article |
| Language: | English |
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Malaysian Solid State Science and Technology Society
2002
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| Online Access: | http://eprints.utm.my/3530/ http://eprints.utm.my/3530/1/v10_investigation.pdf |
| Summary: | Studies on tin-antimony-selenium (TAS) system of SnxSb10Se90-x (x= 0, 5, 10, 12.5, 15, 20 and 30) have been carried out using XRD, XGT and DTA and density measurement, so as to elucidate the structural states and thermal properties. XRD analysis for x= 0, 5, 10 and 12.5 gave an indicative amorphous phase, while that of the samples with x= 15, 20 and 30 maintain the crystalline structures. These were further confirmed by XGT results, which measured the weight percentages and elemental mapping of the samples. It was also observed that x plays important roles in determining the thermal quantities and density of the samples.
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