Simulation of 0.18 micron MOSFET and its characterization

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Simulation of 0.18 micron MOSFET and its characterization

The research is focused on the development of 0.18Âµm channel length of nchannel (NMOS) and p-channel (PMOS) enhancement mode MOSFET. Simulation of the process is carried out using Silvaco Athena to modify theoretical values and obtain more accurate process parameters. Non-ideal effect of a MOSFET d...

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Bibliographic Details
Main Author:	Ahmad Radzi, Syafeeza
Format:	Thesis
Language:	English
Published:	2005
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/3005/ http://eprints.utm.my/3005/1/SyafeezaAhmadRadziMFKE2005.pdf

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