SnS thin films prepared by encapsulated sulfurization

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SnS thin films prepared by encapsulated sulfurization

Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and anneale...

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Bibliographic Details
Main Authors:	Sakrani, Samsudi, D. Hutagalung, Sabar, Wahab, Yusof, Moin, Mastura
Format:	Article
Language:	English
Published:	Persatuan Sains & Teknologi Keadaan Pepejal Malaysia 1996
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/2867/ http://eprints.utm.my/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf

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