SOI based nanowire single-electron transistors: design, simulation and process development

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SOI based nanowire single-electron transistors: design, simulation and process development

One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistor which operate by means of one-by-one electron transfer, is relatively small and consume very low power and suitable for achieving higher levels of...

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Bibliographic Details
Main Authors:	Hashim, Uda, Rasmi, Amiza, Sakrani, Samsudi
Format:	Article
Language:	English
Published:	IJNeaM, Universiti Malaysia Perlis (UniMAP) 2007
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/2525/ http://eprints.utm.my/2525/1/SamsudiSakrani2007_SOIBasedNanowireSingleElectron.pdf

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