SOI based nanowire single-electron transistors: design, simulation and process development
One of the great problems in current large-scale integrated circuits is increasing power dissipation in a small silicon chip. Single-electron transistor which operate by means of one-by-one electron transfer, is relatively small and consume very low power and suitable for achieving higher levels of...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IJNeaM, Universiti Malaysia Perlis (UniMAP)
2007
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/2525/ http://eprints.utm.my/2525/1/SamsudiSakrani2007_SOIBasedNanowireSingleElectron.pdf |