A study on characterization of gate oxide shorts using non-split model

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A study on characterization of gate oxide shorts using non-split model

The integrity of gate oxide shorts (GOS) model is a key factor as quality and reliability indicator of CMOS. Gate oxide defects in MOS transistors can be considered as the layout and technology dependent failures for which logic fault models are not always available, requiring electrical models to s...

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Bibliographic Details
Main Authors:	Chua, Yong Moh, A'ain, Abu Khari
Format:	Article
Language:	English
Published:	2003
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/1931/ http://eprints.utm.my/1931/1/Abu2003_AStudyOnCharacterizationOfOxideShortsUsing.pdf

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