Design approach for tunable CMOS active inductor
A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Act...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2004
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| Subjects: | |
| Online Access: | http://eprints.utm.my/1891/ http://eprints.utm.my/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf |
| _version_ | 1848890236398993408 |
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| author | Sharman, Rafiq A'ain, Abu Khari Azmi, M. Huang, Min Zhe |
| author_facet | Sharman, Rafiq A'ain, Abu Khari Azmi, M. Huang, Min Zhe |
| author_sort | Sharman, Rafiq |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from lOnH - 6OnH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. |
| first_indexed | 2025-11-15T20:38:52Z |
| format | Conference or Workshop Item |
| id | utm-1891 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T20:38:52Z |
| publishDate | 2004 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-18912010-06-01T02:59:20Z http://eprints.utm.my/1891/ Design approach for tunable CMOS active inductor Sharman, Rafiq A'ain, Abu Khari Azmi, M. Huang, Min Zhe TK Electrical engineering. Electronics Nuclear engineering A design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GHz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from lOnH - 6OnH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. 2004-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf Sharman, Rafiq and A'ain, Abu Khari and Azmi, M. and Huang, Min Zhe (2004) Design approach for tunable CMOS active inductor. In: Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on, 7-9 December 2004, Kuala Lumpur. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Sharman, Rafiq A'ain, Abu Khari Azmi, M. Huang, Min Zhe Design approach for tunable CMOS active inductor |
| title | Design approach for tunable CMOS active inductor |
| title_full | Design approach for tunable CMOS active inductor |
| title_fullStr | Design approach for tunable CMOS active inductor |
| title_full_unstemmed | Design approach for tunable CMOS active inductor |
| title_short | Design approach for tunable CMOS active inductor |
| title_sort | design approach for tunable cmos active inductor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/1891/ http://eprints.utm.my/1891/1/SharmanAbuAzmi2004_DesignApproachForTunableCMOS.pdf |