DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology

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DLTS and C(t) transient study of defects induced by neutron radiation in MOS structures of CCD technology

The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to...

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Bibliographic Details
Main Authors:	Ahaitouf, Aziz, Bakhtiar, Hazri, Losson, Etienne, Charles, Jean-Pierre
Format:	Article
Language:	English
Published:	Faculty of Science, UTM 2003
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/10997/ http://eprints.utm.my/10997/1/HazriBakhtiar2003_DLTSandCtTransientStudy.pdf

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