Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino....
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/10834/ http://eprints.utm.my/10834/1/YussofWahab2006_PhotolumnescenceStudiesofInGaAsGaAs.pdf |
| _version_ | 1848892189446242304 |
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| author | Wahab, Yussof Yeong, Wai Woon Deraman, Karim Soh, Chew Beng Muhammad, Rosnita |
| author_facet | Wahab, Yussof Yeong, Wai Woon Deraman, Karim Soh, Chew Beng Muhammad, Rosnita |
| author_sort | Wahab, Yussof |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino.sGao:As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method. |
| first_indexed | 2025-11-15T21:09:54Z |
| format | Conference or Workshop Item |
| id | utm-10834 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T21:09:54Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-108342010-11-12T09:48:15Z http://eprints.utm.my/10834/ Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots Wahab, Yussof Yeong, Wai Woon Deraman, Karim Soh, Chew Beng Muhammad, Rosnita QC Physics In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino.sGao:As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method. 2006-06 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/10834/1/YussofWahab2006_PhotolumnescenceStudiesofInGaAsGaAs.pdf Wahab, Yussof and Yeong, Wai Woon and Deraman, Karim and Soh, Chew Beng and Muhammad, Rosnita (2006) Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots. In: Proceedings of the 4th Annual Fundamental Science Seminar (AFSS 2006), 6th - 7th June 2006, Universiti Teknologi Malaysia, Skudai, Malaysia. |
| spellingShingle | QC Physics Wahab, Yussof Yeong, Wai Woon Deraman, Karim Soh, Chew Beng Muhammad, Rosnita Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots |
| title | Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots |
| title_full | Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots |
| title_fullStr | Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots |
| title_full_unstemmed | Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots |
| title_short | Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots |
| title_sort | photoluminescence studies of in0.5ga0.5as/gaas quantum dots |
| topic | QC Physics |
| url | http://eprints.utm.my/10834/ http://eprints.utm.my/10834/1/YussofWahab2006_PhotolumnescenceStudiesofInGaAsGaAs.pdf |