Mitigation of oxygen presence in AlN (100) & (002) growth using RF magnetron sputtering

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Mitigation of oxygen presence in AlN (100) & (002) growth using RF magnetron sputtering

Aluminium nitride (AlN) nucleation layer (NL) is a useful nitride semiconductor for the growth of Gallium Nitride (GaN) on silicon. Major issues related to the fabrication of AlN films are on its crystallographic orientations and high processing temperatures. In order to fabricate AlN NL at low temp...

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Bibliographic Details
Main Author:	Bakri, Anis Suhaili
Format:	Thesis
Language:	English English English
Published:	2022
Subjects:	TP Chemical technology
Online Access:	http://eprints.uthm.edu.my/8399/ http://eprints.uthm.edu.my/8399/1/24p%20ANIS%20SUHAILI%20BAKRI.pdf http://eprints.uthm.edu.my/8399/2/ANIS%20SUHAILI%20BAKRI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/8399/3/ANIS%20SUHAILI%20BAKRI%20WATERMARK.pdf

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