Characterisation of ballistic carbon nanotube field-effect transistor

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Characterisation of ballistic carbon nanotube field-effect transistor

Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET...

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Bibliographic Details
Main Author:	Sanudin, Rahmat
Format:	Thesis
Language:	English
Published:	2005
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/7727/ http://eprints.uthm.edu.my/7727/1/24p%20RAHMAT%20SANUDIN.pdf

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