Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique
This thesis explains the development and fabrication of first in-house MOSFET device using spin -on dopant technique at KUKUM Microfahrication Cleanroom. The process started with the establishment of process flow, process modules, and process parameters. Four modules were developed. The charac...
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| Format: | Thesis |
| Language: | English English English |
| Published: |
2004
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| Online Access: | http://eprints.uthm.edu.my/7661/ http://eprints.uthm.edu.my/7661/1/24p%20MARLIA%20MORSIN.pdf http://eprints.uthm.edu.my/7661/2/MARLIA%20MORSIN%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7661/3/MARLIA%20MORSIN%20WATERMARK.pdf |
| _version_ | 1848889169428873216 |
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| author | Morsin, Marlia |
| author_facet | Morsin, Marlia |
| author_sort | Morsin, Marlia |
| building | UTHM Institutional Repository |
| collection | Online Access |
| description | This thesis explains the development and fabrication of first in-house MOSFET device
using spin -on dopant technique at KUKUM Microfahrication Cleanroom. The process
started with the establishment of process flow, process modules, and process parameters.
Four modules were developed. The characteristics prior to the MOSFET device
fabrication namely dry and wet oxidation, etching, resist thiclrness, exposure dose
optimization, n-type and p-type spin on dopant and diffusion and also metal thiclrness
characterization were recorded. The data were analyzed and applied in the fabrication of
MOSFET devices. The MOSFET fabrication process llsed blanket-field oxide for
isolation, positive resist for lithography process, Boron and Phosphorus for source/drain
doping and aluminum for metallization. The whole MOSFET process had fOllT masking
process specifically source/drain masking, gate masking, contact masking, and metal
masking. The result for each processes are presented in this thesis. |
| first_indexed | 2025-11-15T20:21:54Z |
| format | Thesis |
| id | uthm-7661 |
| institution | Universiti Tun Hussein Onn Malaysia |
| institution_category | Local University |
| language | English English English |
| last_indexed | 2025-11-15T20:21:54Z |
| publishDate | 2004 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | uthm-76612022-09-08T02:19:41Z http://eprints.uthm.edu.my/7661/ Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique Morsin, Marlia TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics This thesis explains the development and fabrication of first in-house MOSFET device using spin -on dopant technique at KUKUM Microfahrication Cleanroom. The process started with the establishment of process flow, process modules, and process parameters. Four modules were developed. The characteristics prior to the MOSFET device fabrication namely dry and wet oxidation, etching, resist thiclrness, exposure dose optimization, n-type and p-type spin on dopant and diffusion and also metal thiclrness characterization were recorded. The data were analyzed and applied in the fabrication of MOSFET devices. The MOSFET fabrication process llsed blanket-field oxide for isolation, positive resist for lithography process, Boron and Phosphorus for source/drain doping and aluminum for metallization. The whole MOSFET process had fOllT masking process specifically source/drain masking, gate masking, contact masking, and metal masking. The result for each processes are presented in this thesis. 2004-11 Thesis NonPeerReviewed text en http://eprints.uthm.edu.my/7661/1/24p%20MARLIA%20MORSIN.pdf text en http://eprints.uthm.edu.my/7661/2/MARLIA%20MORSIN%20COPYRIGHT%20DECLARATION.pdf text en http://eprints.uthm.edu.my/7661/3/MARLIA%20MORSIN%20WATERMARK.pdf Morsin, Marlia (2004) Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique. Masters thesis, Universiti Tun Hussein Onn Malaysia. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics Morsin, Marlia Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique |
| title | Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique |
| title_full | Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique |
| title_fullStr | Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique |
| title_full_unstemmed | Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique |
| title_short | Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique |
| title_sort | fabrication, characterization and optimization of in-house mosfet transistor using spin on dopant technique |
| topic | TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/7661/ http://eprints.uthm.edu.my/7661/1/24p%20MARLIA%20MORSIN.pdf http://eprints.uthm.edu.my/7661/2/MARLIA%20MORSIN%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7661/3/MARLIA%20MORSIN%20WATERMARK.pdf |