Fabrikasi dan pencirian teknologi 0.13 um nMOS

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Fabrikasi dan pencirian teknologi 0.13 um nMOS

Objektif projek ini adalah melakukan rekabentuk dan simulasi sebuah transistor nMOS dengan saiz salur 0.13 11m. Dengan melaksanakan peraturan penskalaan, transistor nMOS 0.13 11m direkabentuk daripada resipi transistor CMOS 0.18 11m yang telah direkabentuk dan disimulasikan sebelum ini dengan...

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Bibliographic Details
Main Author:	Ahmad, Afandi
Format:	Thesis
Language:	English
Published:	2003
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/7600/ http://eprints.uthm.edu.my/7600/1/24p%20AFANDI%20AHMAD.pdf

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