Simulation, fabrication and characterization of PMOS transistor device

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Simulation, fabrication and characterization of PMOS transistor device

In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low volt...

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Bibliographic Details
Main Author:	Yusuf, Siti Idzura
Format:	Thesis
Language:	English English English
Published:	2006
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/7120/ http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf

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