Simulation, fabrication and characterization of PMOS transistor device
In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low volt...
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| Format: | Thesis |
| Language: | English English English |
| Published: |
2006
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| Online Access: | http://eprints.uthm.edu.my/7120/ http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf |
| _version_ | 1848889007333703680 |
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| author | Yusuf, Siti Idzura |
| author_facet | Yusuf, Siti Idzura |
| author_sort | Yusuf, Siti Idzura |
| building | UTHM Institutional Repository |
| collection | Online Access |
| description | In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold
voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been
carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s
bette r low power/low voltage current concentrat e on p-channe l (PMOS). A n experimen t
w a s also don e to determin e the right paramete r value to b e use d for fabrication process
such as oxidation process thickness rate, shee t resistanc e and meta l thickness. From the
paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully
produced . Fabrication simulation wa s performe d to produc e a 0.1 |am an d 0.3p.m PMO S
transistor by using the ISE-TCA D software . Th e trade off betwee n threshold voltage
(VTH), gat e length (LG) and thin oxide thickness (t o x ) are discusse d to determin e the
characteristics of the transistors. It show s that for 0.3mm (toX = 860A ) PMO S transistor
the value of VT H =-3.33V and 0.5 m m (t ^ = 910A), V T H value =-4.3V. From the
simulation result show for 0.1 jim (to* = 200A), VT H = -0.314V an d for 0.5|im (400A)
Vt h = -0.634V. Th e result shows that, with decreasin g gat e length an d oxide thickness
will produc e lowe r value of threshold voltage . Minimu m value of threshold voltage can
result in a better performanc e of transistor. Anothe r paramete r must b e taken into
consideration such as leakage current, resistivity and conductivity to get a better design
of PMO S transistor in futur e research. |
| first_indexed | 2025-11-15T20:19:20Z |
| format | Thesis |
| id | uthm-7120 |
| institution | Universiti Tun Hussein Onn Malaysia |
| institution_category | Local University |
| language | English English English |
| last_indexed | 2025-11-15T20:19:20Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | uthm-71202022-06-08T02:10:36Z http://eprints.uthm.edu.my/7120/ Simulation, fabrication and characterization of PMOS transistor device Yusuf, Siti Idzura TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low voltage current concentrat e on p-channe l (PMOS). A n experimen t w a s also don e to determin e the right paramete r value to b e use d for fabrication process such as oxidation process thickness rate, shee t resistanc e and meta l thickness. From the paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully produced . Fabrication simulation wa s performe d to produc e a 0.1 |am an d 0.3p.m PMO S transistor by using the ISE-TCA D software . Th e trade off betwee n threshold voltage (VTH), gat e length (LG) and thin oxide thickness (t o x ) are discusse d to determin e the characteristics of the transistors. It show s that for 0.3mm (toX = 860A ) PMO S transistor the value of VT H =-3.33V and 0.5 m m (t ^ = 910A), V T H value =-4.3V. From the simulation result show for 0.1 jim (to* = 200A), VT H = -0.314V an d for 0.5|im (400A) Vt h = -0.634V. Th e result shows that, with decreasin g gat e length an d oxide thickness will produc e lowe r value of threshold voltage . Minimu m value of threshold voltage can result in a better performanc e of transistor. Anothe r paramete r must b e taken into consideration such as leakage current, resistivity and conductivity to get a better design of PMO S transistor in futur e research. 2006-12 Thesis NonPeerReviewed text en http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf text en http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf text en http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf Yusuf, Siti Idzura (2006) Simulation, fabrication and characterization of PMOS transistor device. Masters thesis, Universiti Tun Hussein Onn Malaysia. |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics Yusuf, Siti Idzura Simulation, fabrication and characterization of PMOS transistor device |
| title | Simulation, fabrication and characterization of PMOS transistor device |
| title_full | Simulation, fabrication and characterization of PMOS transistor device |
| title_fullStr | Simulation, fabrication and characterization of PMOS transistor device |
| title_full_unstemmed | Simulation, fabrication and characterization of PMOS transistor device |
| title_short | Simulation, fabrication and characterization of PMOS transistor device |
| title_sort | simulation, fabrication and characterization of pmos transistor device |
| topic | TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/7120/ http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf |