The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application

Metallic nature of multiwalled carbon nanotubes (MWCNTs) were modified using low frequency (50Hz) non-equilibrium plasma, which was generated separately by oxygen and nitrogen dielectric barrier discharge plasma (DBD) at atmospheric pressure. Its potential to behave as semiconducting behavior mainly...

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Main Authors: Sahari, Norain, Buntat, Zolkafle, Azman, Zulkifli, Ngadiron, Zuraidah, Sim, Sy Yi, Zambri, Nor Aira, Mohd Noh, Faridah Hanim, Mustafa, Farahiyah, Mashori, Sumaiya, Norjali, Rasida
Format: Article
Language:English
Published: WARSE 2020
Subjects:
Online Access:http://eprints.uthm.edu.my/6413/
http://eprints.uthm.edu.my/6413/1/AJ%202020%20%28853%29.pdf
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author Sahari, Norain
Buntat, Zolkafle
Azman, Zulkifli
Ngadiron, Zuraidah
Sim, Sy Yi
Zambri, Nor Aira
Mohd Noh, Faridah Hanim
Mustafa, Farahiyah
Mashori, Sumaiya
Norjali, Rasida
author_facet Sahari, Norain
Buntat, Zolkafle
Azman, Zulkifli
Ngadiron, Zuraidah
Sim, Sy Yi
Zambri, Nor Aira
Mohd Noh, Faridah Hanim
Mustafa, Farahiyah
Mashori, Sumaiya
Norjali, Rasida
author_sort Sahari, Norain
building UTHM Institutional Repository
collection Online Access
description Metallic nature of multiwalled carbon nanotubes (MWCNTs) were modified using low frequency (50Hz) non-equilibrium plasma, which was generated separately by oxygen and nitrogen dielectric barrier discharge plasma (DBD) at atmospheric pressure. Its potential to behave as semiconducting behavior mainly in diode application was studied. The surface structure and electrical properties changes before and after treatments were analyzed by using X-Ray Photoelectron (XPS), and IV measurement (a two-point probe). The current–voltage (I–V) characteristics shows that Au/MWCNT-N2(12kV)/Al shows good rectifying behavior. This showed that, the nitrogen-containing group can modify the metallic nature of MWCNTs to semiconducting behavior. Since the I-V curves for Au/MWCNTs-N2(12kV)/Al has rectifying behavior similar to Schottky diode, the electronic parameters such as ideality factor, barrier height and series resistance of the device were extracted by using three methods and give good agreement between them.
first_indexed 2025-11-15T20:16:08Z
format Article
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institution Universiti Tun Hussein Onn Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T20:16:08Z
publishDate 2020
publisher WARSE
recordtype eprints
repository_type Digital Repository
spelling uthm-64132022-01-30T08:43:42Z http://eprints.uthm.edu.my/6413/ The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application Sahari, Norain Buntat, Zolkafle Azman, Zulkifli Ngadiron, Zuraidah Sim, Sy Yi Zambri, Nor Aira Mohd Noh, Faridah Hanim Mustafa, Farahiyah Mashori, Sumaiya Norjali, Rasida T Technology (General) Metallic nature of multiwalled carbon nanotubes (MWCNTs) were modified using low frequency (50Hz) non-equilibrium plasma, which was generated separately by oxygen and nitrogen dielectric barrier discharge plasma (DBD) at atmospheric pressure. Its potential to behave as semiconducting behavior mainly in diode application was studied. The surface structure and electrical properties changes before and after treatments were analyzed by using X-Ray Photoelectron (XPS), and IV measurement (a two-point probe). The current–voltage (I–V) characteristics shows that Au/MWCNT-N2(12kV)/Al shows good rectifying behavior. This showed that, the nitrogen-containing group can modify the metallic nature of MWCNTs to semiconducting behavior. Since the I-V curves for Au/MWCNTs-N2(12kV)/Al has rectifying behavior similar to Schottky diode, the electronic parameters such as ideality factor, barrier height and series resistance of the device were extracted by using three methods and give good agreement between them. WARSE 2020 Article PeerReviewed text en http://eprints.uthm.edu.my/6413/1/AJ%202020%20%28853%29.pdf Sahari, Norain and Buntat, Zolkafle and Azman, Zulkifli and Ngadiron, Zuraidah and Sim, Sy Yi and Zambri, Nor Aira and Mohd Noh, Faridah Hanim and Mustafa, Farahiyah and Mashori, Sumaiya and Norjali, Rasida (2020) The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application. International Journal of Advanced Trends in Computer Science and Engineering, 9 (1). pp. 503-511. ISSN 2278-3091 https://doi.org/10.30534/ijatcse/2020/7191.42020
spellingShingle T Technology (General)
Sahari, Norain
Buntat, Zolkafle
Azman, Zulkifli
Ngadiron, Zuraidah
Sim, Sy Yi
Zambri, Nor Aira
Mohd Noh, Faridah Hanim
Mustafa, Farahiyah
Mashori, Sumaiya
Norjali, Rasida
The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application
title The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application
title_full The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application
title_fullStr The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application
title_full_unstemmed The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application
title_short The structural analysis of MWCNTs modified by DBD plasma and electrical properties on schottky diode application
title_sort structural analysis of mwcnts modified by dbd plasma and electrical properties on schottky diode application
topic T Technology (General)
url http://eprints.uthm.edu.my/6413/
http://eprints.uthm.edu.my/6413/
http://eprints.uthm.edu.my/6413/1/AJ%202020%20%28853%29.pdf