The development of simulation model of carrier injection in quantum dot laser system

The development simulation model of quantum dot (QD) laser is performed based upon rate equations for the carriers and photons in energy states. The rate equation is solved by using Matlab, Runge-Kutta method. In this paper shown that by increasing carrier injection to the active medium of laser, sw...

Full description

Bibliographic Details
Main Authors: Nordin, Norbaizura, Radiman, Shahidan
Format: Article
Language:English
Published: Asian Research Publishing Network (ARPN) 2016
Subjects:
Online Access:http://eprints.uthm.edu.my/5374/
http://eprints.uthm.edu.my/5374/1/AJ%202016%20%2878%29.pdf
_version_ 1848888536877498368
author Nordin, Norbaizura
Radiman, Shahidan
author_facet Nordin, Norbaizura
Radiman, Shahidan
author_sort Nordin, Norbaizura
building UTHM Institutional Repository
collection Online Access
description The development simulation model of quantum dot (QD) laser is performed based upon rate equations for the carriers and photons in energy states. The rate equation is solved by using Matlab, Runge-Kutta method. In this paper shown that by increasing carrier injection to the active medium of laser, switching-on and stability time of the system would decrease while output power at peak and stationary will be increased. Indirect (non-instantaneous) carrier injection into QD is an essential component of our model and it describes the actual situation for QD laser.
first_indexed 2025-11-15T20:11:51Z
format Article
id uthm-5374
institution Universiti Tun Hussein Onn Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T20:11:51Z
publishDate 2016
publisher Asian Research Publishing Network (ARPN)
recordtype eprints
repository_type Digital Repository
spelling uthm-53742022-01-09T05:23:40Z http://eprints.uthm.edu.my/5374/ The development of simulation model of carrier injection in quantum dot laser system Nordin, Norbaizura Radiman, Shahidan QC Physics T Technology (General) The development simulation model of quantum dot (QD) laser is performed based upon rate equations for the carriers and photons in energy states. The rate equation is solved by using Matlab, Runge-Kutta method. In this paper shown that by increasing carrier injection to the active medium of laser, switching-on and stability time of the system would decrease while output power at peak and stationary will be increased. Indirect (non-instantaneous) carrier injection into QD is an essential component of our model and it describes the actual situation for QD laser. Asian Research Publishing Network (ARPN) 2016 Article PeerReviewed text en http://eprints.uthm.edu.my/5374/1/AJ%202016%20%2878%29.pdf Nordin, Norbaizura and Radiman, Shahidan (2016) The development of simulation model of carrier injection in quantum dot laser system. ARPN Journal of Engineering and Applied Sciences, 11 (12). pp. 7578-7582. ISSN 1819-6608
spellingShingle QC Physics
T Technology (General)
Nordin, Norbaizura
Radiman, Shahidan
The development of simulation model of carrier injection in quantum dot laser system
title The development of simulation model of carrier injection in quantum dot laser system
title_full The development of simulation model of carrier injection in quantum dot laser system
title_fullStr The development of simulation model of carrier injection in quantum dot laser system
title_full_unstemmed The development of simulation model of carrier injection in quantum dot laser system
title_short The development of simulation model of carrier injection in quantum dot laser system
title_sort development of simulation model of carrier injection in quantum dot laser system
topic QC Physics
T Technology (General)
url http://eprints.uthm.edu.my/5374/
http://eprints.uthm.edu.my/5374/1/AJ%202016%20%2878%29.pdf