The effect of substrate on TiO2 thin films deposited by atomic layer deposition (ALD)
"ALD is a precision growth technique that can deposit either amorphous or polycrystalline thin films on a variety of substrates. The difference in substrate can cause a variation in the ALD process, even it is carried out using the same reactants and deposition conditions [1]. TiO2 thin films...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications, Switzerland
2015
|
| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/4878/ http://eprints.uthm.edu.my/4878/1/AJ%202015%20%2844%29.pdf |
| _version_ | 1848888403707297792 |
|---|---|
| author | Hussin, Rosniza Kwang, Leong Choy Xianghui, Hou |
| author_facet | Hussin, Rosniza Kwang, Leong Choy Xianghui, Hou |
| author_sort | Hussin, Rosniza |
| building | UTHM Institutional Repository |
| collection | Online Access |
| description | "ALD is a precision growth technique that can deposit either amorphous or polycrystalline thin films
on a variety of substrates. The difference in substrate can cause a variation in the ALD process,
even it is carried out using the same reactants and deposition conditions [1]. TiO2 thin films were
grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel
plates in order to study the effect of substrates on the growth of TiO2 with 3,000 deposition cycles,
at 300oC.The thin films were analyzed using Xray Diffraction (XRD), Raman Spectroscopy,
Atomic Force Microscope (AFM) and Spectroscopic Ellipsometer. The XRD analysis indicates that
the main diffraction peak of (101) (2_= 25.3) could be indexed to anatase TiO2, regardless the types
of substrates. The results show that crystalline TiO2 thin films could be grown easily on a crystal
substrate rather than on an amorphous substrate." |
| first_indexed | 2025-11-15T20:09:44Z |
| format | Article |
| id | uthm-4878 |
| institution | Universiti Tun Hussein Onn Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T20:09:44Z |
| publishDate | 2015 |
| publisher | Trans Tech Publications, Switzerland |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | uthm-48782021-12-23T04:20:23Z http://eprints.uthm.edu.my/4878/ The effect of substrate on TiO2 thin films deposited by atomic layer deposition (ALD) Hussin, Rosniza Kwang, Leong Choy Xianghui, Hou T Technology (General) TA401-492 Materials of engineering and construction. Mechanics of materials "ALD is a precision growth technique that can deposit either amorphous or polycrystalline thin films on a variety of substrates. The difference in substrate can cause a variation in the ALD process, even it is carried out using the same reactants and deposition conditions [1]. TiO2 thin films were grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel plates in order to study the effect of substrates on the growth of TiO2 with 3,000 deposition cycles, at 300oC.The thin films were analyzed using Xray Diffraction (XRD), Raman Spectroscopy, Atomic Force Microscope (AFM) and Spectroscopic Ellipsometer. The XRD analysis indicates that the main diffraction peak of (101) (2_= 25.3) could be indexed to anatase TiO2, regardless the types of substrates. The results show that crystalline TiO2 thin films could be grown easily on a crystal substrate rather than on an amorphous substrate." Trans Tech Publications, Switzerland 2015 Article PeerReviewed text en http://eprints.uthm.edu.my/4878/1/AJ%202015%20%2844%29.pdf Hussin, Rosniza and Kwang, Leong Choy and Xianghui, Hou (2015) The effect of substrate on TiO2 thin films deposited by atomic layer deposition (ALD). Advanced Materials Research, 1087. pp. 147-151. ISSN 1022-6680 http://dx.doi.org/10.4028/www.scientific.net/AMR.1087.147 |
| spellingShingle | T Technology (General) TA401-492 Materials of engineering and construction. Mechanics of materials Hussin, Rosniza Kwang, Leong Choy Xianghui, Hou The effect of substrate on TiO2 thin films deposited by atomic layer deposition (ALD) |
| title | The effect of substrate on TiO2 thin films deposited by atomic layer
deposition (ALD) |
| title_full | The effect of substrate on TiO2 thin films deposited by atomic layer
deposition (ALD) |
| title_fullStr | The effect of substrate on TiO2 thin films deposited by atomic layer
deposition (ALD) |
| title_full_unstemmed | The effect of substrate on TiO2 thin films deposited by atomic layer
deposition (ALD) |
| title_short | The effect of substrate on TiO2 thin films deposited by atomic layer
deposition (ALD) |
| title_sort | effect of substrate on tio2 thin films deposited by atomic layer
deposition (ald) |
| topic | T Technology (General) TA401-492 Materials of engineering and construction. Mechanics of materials |
| url | http://eprints.uthm.edu.my/4878/ http://eprints.uthm.edu.my/4878/ http://eprints.uthm.edu.my/4878/1/AJ%202015%20%2844%29.pdf |