Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication

Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication

Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconducto...

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Bibliographic Details
Main Authors: Lee, Mei Yee, Mat Jubadi, Wasuzarina
Other Authors: Mahmud, Farhanahani
Format: Book Section
Language:English
Published: Penerbit UTHM 2020
Subjects:
TK7800-8360 Electronics
TK7885-7895 Computer engineering. Computer hardware
Online Access:http://eprints.uthm.edu.my/2746/
http://eprints.uthm.edu.my/2746/1/Ch05.pdf

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