Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology

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Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology

This research presents failure analysis (FA) works on gate oxide defect of Bi�polar CMOS Diffuse (BCD) technology. The latent problem with electrical degradation in the CMOS performance is due to gate oxide defect. The defect was well known affects the CMOS reliability after certain period of ti...

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Bibliographic Details
Main Author:	Abdullah, Farisal
Format:	Thesis
Language:	English English English
Published:	2013
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/1902/ http://eprints.uthm.edu.my/1902/1/24p%20FARISAL%20ABDULLAH.pdf http://eprints.uthm.edu.my/1902/2/FARISAL%20ABDULLAH%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/1902/3/FARISAL%20ABDULLAH%20WATERMARK.pdf

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