Characterization of carbon nanotube field-effect transistor fabricated by direct growth method

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Characterization of carbon nanotube field-effect transistor fabricated by direct growth method

We have fabricated carbon nanotube field-effect transistor by means of direct growth method and investigated their structural and transport characteristics. The FET shows ambipolar operation. We showed the current modulation by bias and gate voltage and its relation. The device operation is consiste...

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Bibliographic Details
Main Authors:	Mohamed, Mohd Ambri, Asyadi Azam, Mohd, Kawabuchi, Hitoshi, Shikoh, Eiji, Fujiwara, Akihiko
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering QC Physics
Online Access:	http://eprints.utem.edu.my/id/eprint/4675/ http://eprints.utem.edu.my/id/eprint/4675/1/abstract_ambri_ICEI2010.pdf

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