Characterization of carbon nanotube field-effect transistor fabricated by direct growth method

We have fabricated carbon nanotube field-effect transistor by means of direct growth method and investigated their structural and transport characteristics. The FET shows ambipolar operation. We showed the current modulation by bias and gate voltage and its relation. The device operation is consiste...

Full description

Bibliographic Details
Main Authors: Mohamed, Mohd Ambri, Asyadi Azam, Mohd, Kawabuchi, Hitoshi, Shikoh, Eiji, Fujiwara, Akihiko
Format: Conference or Workshop Item
Language:English
Published: 2010
Subjects:
Online Access:http://eprints.utem.edu.my/id/eprint/4675/
http://eprints.utem.edu.my/id/eprint/4675/1/abstract_ambri_ICEI2010.pdf
_version_ 1848887057179475968
author Mohamed, Mohd Ambri
Asyadi Azam, Mohd
Kawabuchi, Hitoshi
Shikoh, Eiji
Fujiwara, Akihiko
author_facet Mohamed, Mohd Ambri
Asyadi Azam, Mohd
Kawabuchi, Hitoshi
Shikoh, Eiji
Fujiwara, Akihiko
author_sort Mohamed, Mohd Ambri
building UTeM Institutional Repository
collection Online Access
description We have fabricated carbon nanotube field-effect transistor by means of direct growth method and investigated their structural and transport characteristics. The FET shows ambipolar operation. We showed the current modulation by bias and gate voltage and its relation. The device operation is consistent with Schottky-type FET, and showed small value of activation energy.
first_indexed 2025-11-15T19:48:20Z
format Conference or Workshop Item
id utem-4675
institution Universiti Teknikal Malaysia Melaka
institution_category Local University
language English
last_indexed 2025-11-15T19:48:20Z
publishDate 2010
recordtype eprints
repository_type Digital Repository
spelling utem-46752015-05-28T03:27:17Z http://eprints.utem.edu.my/id/eprint/4675/ Characterization of carbon nanotube field-effect transistor fabricated by direct growth method Mohamed, Mohd Ambri Asyadi Azam, Mohd Kawabuchi, Hitoshi Shikoh, Eiji Fujiwara, Akihiko TK Electrical engineering. Electronics Nuclear engineering QC Physics We have fabricated carbon nanotube field-effect transistor by means of direct growth method and investigated their structural and transport characteristics. The FET shows ambipolar operation. We showed the current modulation by bias and gate voltage and its relation. The device operation is consistent with Schottky-type FET, and showed small value of activation energy. 2010-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/4675/1/abstract_ambri_ICEI2010.pdf Mohamed, Mohd Ambri and Asyadi Azam, Mohd and Kawabuchi, Hitoshi and Shikoh, Eiji and Fujiwara, Akihiko (2010) Characterization of carbon nanotube field-effect transistor fabricated by direct growth method. In: The 2nd International Conference on Engineering and ICT (ICEI 2010), 18-20 February 2010, Holiday Inn, Melaka.
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
QC Physics
Mohamed, Mohd Ambri
Asyadi Azam, Mohd
Kawabuchi, Hitoshi
Shikoh, Eiji
Fujiwara, Akihiko
Characterization of carbon nanotube field-effect transistor fabricated by direct growth method
title Characterization of carbon nanotube field-effect transistor fabricated by direct growth method
title_full Characterization of carbon nanotube field-effect transistor fabricated by direct growth method
title_fullStr Characterization of carbon nanotube field-effect transistor fabricated by direct growth method
title_full_unstemmed Characterization of carbon nanotube field-effect transistor fabricated by direct growth method
title_short Characterization of carbon nanotube field-effect transistor fabricated by direct growth method
title_sort characterization of carbon nanotube field-effect transistor fabricated by direct growth method
topic TK Electrical engineering. Electronics Nuclear engineering
QC Physics
url http://eprints.utem.edu.my/id/eprint/4675/
http://eprints.utem.edu.my/id/eprint/4675/1/abstract_ambri_ICEI2010.pdf