Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist
This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet...
| Main Authors: | , , , , , , , |
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| Format: | Article |
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Jpn. J. Appl. Phys.
2010
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/4371/ |
| _version_ | 1848887024498507776 |
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| author | Koukharenko, Elena Jekaterina , Kuleshova Fowler, Marcel Kok, Swee Leong Tudor, Michael J. Beeby, Stephen P. Nandhakumar, Iris White, Neil |
| author_facet | Koukharenko, Elena Jekaterina , Kuleshova Fowler, Marcel Kok, Swee Leong Tudor, Michael J. Beeby, Stephen P. Nandhakumar, Iris White, Neil |
| author_sort | Koukharenko, Elena |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist. |
| first_indexed | 2025-11-15T19:47:49Z |
| format | Article |
| id | utem-4371 |
| institution | Universiti Teknikal Malaysia Melaka |
| institution_category | Local University |
| last_indexed | 2025-11-15T19:47:49Z |
| publishDate | 2010 |
| publisher | Jpn. J. Appl. Phys. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utem-43712012-07-19T14:57:28Z http://eprints.utem.edu.my/id/eprint/4371/ Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist Koukharenko, Elena Jekaterina , Kuleshova Fowler, Marcel Kok, Swee Leong Tudor, Michael J. Beeby, Stephen P. Nandhakumar, Iris White, Neil TK Electrical engineering. Electronics Nuclear engineering This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist. Jpn. J. Appl. Phys. 2010 Article PeerReviewed Koukharenko, Elena and Jekaterina , Kuleshova and Fowler, Marcel and Kok, Swee Leong and Tudor, Michael J. and Beeby, Stephen P. and Nandhakumar, Iris and White, Neil (2010) Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist. Jpn. J. Appl. Phys., 49. ISSN Online: 1347-4065/ Print: 0021-4922 http://jjap.jsap.jp/link?JJAP/49/06GE07/ |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Koukharenko, Elena Jekaterina , Kuleshova Fowler, Marcel Kok, Swee Leong Tudor, Michael J. Beeby, Stephen P. Nandhakumar, Iris White, Neil Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist |
| title | Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist |
| title_full | Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist |
| title_fullStr | Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist |
| title_full_unstemmed | Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist |
| title_short | Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist |
| title_sort | ion track nanolithography using thick cross-linked poly(methyl methacrylate) 950 photoresist |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utem.edu.my/id/eprint/4371/ http://eprints.utem.edu.my/id/eprint/4371/ |