Free-standing thick-film piezoelectric device

A free-standing thick-film cantilever sensor structure is presented. Such devices find use in applications such as vibration detection or energy harvesting. The structure was fabricated by screen printing layers of lead zirconate titanate between silver/palladium electrodes and cofiring the layers...

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Main Authors: Kok, Swee Leong, White, Neil, Harris, Nick
Format: Article
Language:English
Published: IET 2008
Subjects:
Online Access:http://eprints.utem.edu.my/id/eprint/4370/
http://eprints.utem.edu.my/id/eprint/4370/1/Free-standing_thick-film_piezoelectric_device.pdf
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author Kok, Swee Leong
White, Neil
Harris, Nick
author_facet Kok, Swee Leong
White, Neil
Harris, Nick
author_sort Kok, Swee Leong
building UTeM Institutional Repository
collection Online Access
description A free-standing thick-film cantilever sensor structure is presented. Such devices find use in applications such as vibration detection or energy harvesting. The structure was fabricated by screen printing layers of lead zirconate titanate between silver/palladium electrodes and cofiring the layers together with a carbon sacrificial layer (deposited underneath) in an air environment at a temperature of 8508C. The free-standing structure, of dimensions 18 mm long by 9 mm wide and thickness of 50 mm, was found to produce electrical powers of up to 95 nW at an acceleration level of 9.81 m/s2 (1 g), when driving a 60 kV load resistance.
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spelling utem-43702022-01-05T09:32:43Z http://eprints.utem.edu.my/id/eprint/4370/ Free-standing thick-film piezoelectric device Kok, Swee Leong White, Neil Harris, Nick TK Electrical engineering. Electronics Nuclear engineering A free-standing thick-film cantilever sensor structure is presented. Such devices find use in applications such as vibration detection or energy harvesting. The structure was fabricated by screen printing layers of lead zirconate titanate between silver/palladium electrodes and cofiring the layers together with a carbon sacrificial layer (deposited underneath) in an air environment at a temperature of 8508C. The free-standing structure, of dimensions 18 mm long by 9 mm wide and thickness of 50 mm, was found to produce electrical powers of up to 95 nW at an acceleration level of 9.81 m/s2 (1 g), when driving a 60 kV load resistance. IET 2008 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/4370/1/Free-standing_thick-film_piezoelectric_device.pdf Kok, Swee Leong and White, Neil and Harris, Nick (2008) Free-standing thick-film piezoelectric device. Electron. Lett. , 44 (4). pp. 280-282. ISSN 0013-5194 http://digital-library.theiet.org/getabs/servlet/GetabsServlet?prog=normal&id=ELLEAK000044000004000280000001&idtype=cvips&gifs=yes&ref=no
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Kok, Swee Leong
White, Neil
Harris, Nick
Free-standing thick-film piezoelectric device
title Free-standing thick-film piezoelectric device
title_full Free-standing thick-film piezoelectric device
title_fullStr Free-standing thick-film piezoelectric device
title_full_unstemmed Free-standing thick-film piezoelectric device
title_short Free-standing thick-film piezoelectric device
title_sort free-standing thick-film piezoelectric device
topic TK Electrical engineering. Electronics Nuclear engineering
url http://eprints.utem.edu.my/id/eprint/4370/
http://eprints.utem.edu.my/id/eprint/4370/
http://eprints.utem.edu.my/id/eprint/4370/1/Free-standing_thick-film_piezoelectric_device.pdf