Impact of Different Dose and Angle in HALO Structure
for 45nm NMOS Device

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Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device

In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using...

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Bibliographic Details
Main Author:	Fauziyah, Salehuddin
Format:	Article
Language:	English
Published:	Trans Tech Publications 2012
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/4197/ http://eprints.utem.edu.my/id/eprint/4197/1/%28J8%29_AMR.383-390.6827.pdf

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