Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method

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Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...

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Bibliographic Details
Main Authors:	Fauziyah, Salehuddin, Ahmad, Ibrahim, Azlee Hamid, Fazrena, Zaharim, Azami, Elgomati, Husam Ahmed, Majlis, Burhanuddin Yeop, Apte, Prakash R.
Format:	Article
Language:	English
Published:	International Journal of Engineering and Applied Sciences 2011
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/4194/ http://eprints.utem.edu.my/id/eprint/4194/1/%28J5%29_JEAS_7%282%29_80-86_zie.pdf

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