Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method
In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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International Journal of Engineering and Applied Sciences
2011
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| Online Access: | http://eprints.utem.edu.my/id/eprint/4194/ http://eprints.utem.edu.my/id/eprint/4194/1/%28J5%29_JEAS_7%282%29_80-86_zie.pdf |
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| author | Fauziyah, Salehuddin Ahmad, Ibrahim Azlee Hamid, Fazrena Zaharim, Azami Elgomati, Husam Ahmed Majlis, Burhanuddin Yeop Apte, Prakash R. |
| author_facet | Fauziyah, Salehuddin Ahmad, Ibrahim Azlee Hamid, Fazrena Zaharim, Azami Elgomati, Husam Ahmed Majlis, Burhanuddin Yeop Apte, Prakash R. |
| author_sort | Fauziyah, Salehuddin |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm. |
| first_indexed | 2025-11-15T19:47:29Z |
| format | Article |
| id | utem-4194 |
| institution | Universiti Teknikal Malaysia Melaka |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T19:47:29Z |
| publishDate | 2011 |
| publisher | International Journal of Engineering and Applied Sciences |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utem-41942023-07-04T13:18:45Z http://eprints.utem.edu.my/id/eprint/4194/ Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method Fauziyah, Salehuddin Ahmad, Ibrahim Azlee Hamid, Fazrena Zaharim, Azami Elgomati, Husam Ahmed Majlis, Burhanuddin Yeop Apte, Prakash R. TK Electrical engineering. Electronics Nuclear engineering In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm. International Journal of Engineering and Applied Sciences 2011 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/4194/1/%28J5%29_JEAS_7%282%29_80-86_zie.pdf Fauziyah, Salehuddin and Ahmad, Ibrahim and Azlee Hamid, Fazrena and Zaharim, Azami and Elgomati, Husam Ahmed and Majlis, Burhanuddin Yeop and Apte, Prakash R. (2011) Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method. World Academy of Science, Engineering and Technology. pp. 80-86. ISSN 2010-3999 (online) http://www.waset.org/journals/ijeas/ |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Fauziyah, Salehuddin Ahmad, Ibrahim Azlee Hamid, Fazrena Zaharim, Azami Elgomati, Husam Ahmed Majlis, Burhanuddin Yeop Apte, Prakash R. Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method |
| title | Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method |
| title_full | Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method |
| title_fullStr | Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method |
| title_full_unstemmed | Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method |
| title_short | Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method |
| title_sort | optimization of halo structure effects in 45nm p-type mosfets device using taguchi method |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utem.edu.my/id/eprint/4194/ http://eprints.utem.edu.my/id/eprint/4194/ http://eprints.utem.edu.my/id/eprint/4194/1/%28J5%29_JEAS_7%282%29_80-86_zie.pdf |