APA (7th ed.) Citation

Fauziyah, S., Ahmad, I., Azlee Hamid, F., Zaharim, A., Elgomati, H. A., Majlis, B. Y., & Apte, P. R. (2011). Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi method. International Journal of Engineering and Applied Sciences.

Chicago Style (17th ed.) Citation

Fauziyah, Salehuddin, Ibrahim Ahmad, Fazrena Azlee Hamid, Azami Zaharim, Husam Ahmed Elgomati, Burhanuddin Yeop Majlis, and Prakash R. Apte. Optimization of HALO Structure Effects in 45nm P-type MOSFETs Device Using Taguchi Method. International Journal of Engineering and Applied Sciences, 2011.

MLA (9th ed.) Citation

Fauziyah, Salehuddin, et al. Optimization of HALO Structure Effects in 45nm P-type MOSFETs Device Using Taguchi Method. International Journal of Engineering and Applied Sciences, 2011.