Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm
PMOS Device

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Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...

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Bibliographic Details
Main Author:	Fauziyah, Salehuddin
Format:	Article
Language:	English
Published:	International Network for Scientific Information Publication (INSI) 2011
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/3797/ http://eprints.utem.edu.my/id/eprint/3797/1/%28J5%29_AJBAS_5%281%29_55-61.pdf

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