Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...
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| Format: | Article |
| Language: | English |
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International Network for Scientific Information Publication (INSI)
2011
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| Online Access: | http://eprints.utem.edu.my/id/eprint/3797/ http://eprints.utem.edu.my/id/eprint/3797/1/%28J5%29_AJBAS_5%281%29_55-61.pdf |
| _version_ | 1848886963552124928 |
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| author | Fauziyah, Salehuddin |
| author_facet | Fauziyah, Salehuddin |
| author_sort | Fauziyah, Salehuddin |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | In this paper, we investigate the influence of process parameters like HALO and
Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process
parameters were determined by using Taguchi experimental design method. The level of importance
of the process parameters on threshold voltage was determined by using analysis of variance
(ANOVA). The virtual fabrication of the PMOS device was performed by using ATHENA module.
While the electrical characterization of the device was implemented by using ATLAS module. These
two modules were combined with Taguchi method to aid in design and optimizer the process
parameters. Besides HALO and S/D implantation, the other two process parameters which used were
oxide growth temperature and silicide anneal temperature. These process parameters were varied for
3 levels to perform 9 experiments. Threshold voltage (VTH) results were used as the evaluation
variables. Then, the results were subjected to the Taguchi method to determine the optimal process
parameters and to produce predicted values. The predicted values of the process parameters were
verified successfully with ATHENA and ATLAS's simulator. In this research, halo implantation found
to be the major factor affecting the threshold voltage (70%), whereas silicide anneal temperature was
the second ranking factor (17%). As conclusions, halo implantation was identified as one of the
process parameters that has the strongest effect on the response characteristics. While the S/D
Implantation was identified as an adjustment factor to get the threshold voltage closer to the nominal
value (-0.150V). |
| first_indexed | 2025-11-15T19:46:51Z |
| format | Article |
| id | utem-3797 |
| institution | Universiti Teknikal Malaysia Melaka |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T19:46:51Z |
| publishDate | 2011 |
| publisher | International Network for Scientific Information Publication (INSI) |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utem-37972015-05-28T02:37:44Z http://eprints.utem.edu.my/id/eprint/3797/ Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device Fauziyah, Salehuddin TA Engineering (General). Civil engineering (General) In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters on threshold voltage was determined by using analysis of variance (ANOVA). The virtual fabrication of the PMOS device was performed by using ATHENA module. While the electrical characterization of the device was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Besides HALO and S/D implantation, the other two process parameters which used were oxide growth temperature and silicide anneal temperature. These process parameters were varied for 3 levels to perform 9 experiments. Threshold voltage (VTH) results were used as the evaluation variables. Then, the results were subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were verified successfully with ATHENA and ATLAS's simulator. In this research, halo implantation found to be the major factor affecting the threshold voltage (70%), whereas silicide anneal temperature was the second ranking factor (17%). As conclusions, halo implantation was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as an adjustment factor to get the threshold voltage closer to the nominal value (-0.150V). International Network for Scientific Information Publication (INSI) 2011-01 Article PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/3797/1/%28J5%29_AJBAS_5%281%29_55-61.pdf Fauziyah, Salehuddin (2011) Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device. Australian Journal of Basic and Applied Sciences, 5 (1). pp. 55-61. ISSN 1991-8178 http://www.ajbasweb.com/ |
| spellingShingle | TA Engineering (General). Civil engineering (General) Fauziyah, Salehuddin Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device |
| title | Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm
PMOS Device |
| title_full | Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm
PMOS Device |
| title_fullStr | Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm
PMOS Device |
| title_full_unstemmed | Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm
PMOS Device |
| title_short | Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm
PMOS Device |
| title_sort | influence of halo and source/drain implantation on threshold voltage in 45nm
pmos device |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://eprints.utem.edu.my/id/eprint/3797/ http://eprints.utem.edu.my/id/eprint/3797/ http://eprints.utem.edu.my/id/eprint/3797/1/%28J5%29_AJBAS_5%281%29_55-61.pdf |