Application of Taguchi Method in Optimization
of Gate Oxide and Silicide Thickness for
45nm NMOS Device

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Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device

The optimization of 45nm NMOS device was studied using Taguchi Method. This method was used to analyze the experimental data in order to get the optimum results. In this paper, there are four factors were varied for 3 levels to perform 9 experiments. Silicide on the poly-Si gate electrode was us...

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Bibliographic Details
Main Author:	Fauziyah, Salehuddin
Format:	Article
Language:	English
Published:	IJENS Publishers 2009
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/3792/ http://eprints.utem.edu.my/id/eprint/3792/1/%28J1%29_97010-0404_IJET-IJENS.pdf

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