Impact of SALICIDE and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device

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Impact of SALICIDE and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device

In this paper, we investigate the impact of Source/Drain (S/D) implant and salicide on poly sheet resistance (RS) and leakage current (ILeak) in 45nm NMOS device performance. The experimental studies were conducted under varying four process parameters, namely Halo implant, Source/Drain Implant, O...

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Bibliographic Details
Main Author:	Fauziyah, Salehuddin
Format:	Article
Language:	English
Published:	Universiti Teknikal Malaysia Melaka 2010
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/3777/ http://eprints.utem.edu.my/id/eprint/3777/1/%28J2%29_JTEC_2%281%29_36-41_zie.pdf

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