Investigation of a 3 nm Strained Fin Field-Effect Transistor (FinFET)

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Investigation of a 3 nm Strained Fin Field-Effect Transistor (FinFET)

Fin Field-Effect Transistor (FinFET) device is qualified for its low-power operation capability at which the performance can be improved with further scaling. However, critical scaling towards 10nm of FinFET leads to a series of issues such as drain-induced barrier lowering (DIBL), threshold voltage...

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Bibliographic Details
Main Author:	Tan, Pei Xin
Format:	Final Year Project / Dissertation / Thesis
Published:	2023
Subjects:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utar.edu.my/5960/ http://eprints.utar.edu.my/5960/1/Tan_Pei_Xin_21AGM06713.pdf

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