Device and Transistor Level Circuit Performance Analysis of Nanoscale Mosfet

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Device and Transistor Level Circuit Performance Analysis of Nanoscale Mosfet

When nano-MOSFET structural dimension is downscaled to nanometer regime, quantum effects become obvious. This small channel length nano-MOSFET reduces electron transit time from source to drain. Owing to small dimension, its smaller capacitance would result lower power dissipation. When applying th...

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Bibliographic Details
Main Author:	Ooi, Chek Yee
Format:	Final Year Project / Dissertation / Thesis
Published:	2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utar.edu.my/3602/ http://eprints.utar.edu.my/3602/1/EGA%2D2019%2D0909071%2D1.pdf

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