Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and...
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| Format: | Thesis |
| Language: | English |
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2008
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| Online Access: | http://eprints.usm.my/9893/ http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf |
| _version_ | 1848870849068662784 |
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| author | Ali Al-Obaidi, Nihad Khalaf |
| author_facet | Ali Al-Obaidi, Nihad Khalaf |
| author_sort | Ali Al-Obaidi, Nihad Khalaf |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam.
Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed.
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| first_indexed | 2025-11-15T15:30:43Z |
| format | Thesis |
| id | usm-9893 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T15:30:43Z |
| publishDate | 2008 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-98932017-03-22T02:23:47Z http://eprints.usm.my/9893/ Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb]. Ali Al-Obaidi, Nihad Khalaf TA401-492 Materials of engineering and construction. Mechanics of materials Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed. 2008-06 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf Ali Al-Obaidi, Nihad Khalaf (2008) Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb]. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | TA401-492 Materials of engineering and construction. Mechanics of materials Ali Al-Obaidi, Nihad Khalaf Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb]. |
| title | Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas
[TA418.9.N35 B152 2008 f rb].
|
| title_full | Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas
[TA418.9.N35 B152 2008 f rb].
|
| title_fullStr | Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas
[TA418.9.N35 B152 2008 f rb].
|
| title_full_unstemmed | Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas
[TA418.9.N35 B152 2008 f rb].
|
| title_short | Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas
[TA418.9.N35 B152 2008 f rb].
|
| title_sort | fabrication and characterization of electrochemically formed nanocrystalline porous si and gaas
[ta418.9.n35 b152 2008 f rb]. |
| topic | TA401-492 Materials of engineering and construction. Mechanics of materials |
| url | http://eprints.usm.my/9893/ http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf |