Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].

Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physi...

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Main Author: Tan, Philip Beow Yew
Format: Thesis
Language:English
Published: 2008
Subjects:
Online Access:http://eprints.usm.my/9583/
http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf
_version_ 1848870796619939840
author Tan, Philip Beow Yew
author_facet Tan, Philip Beow Yew
author_sort Tan, Philip Beow Yew
building USM Institutional Repository
collection Online Access
description Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor.
first_indexed 2025-11-15T15:29:53Z
format Thesis
id usm-9583
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T15:29:53Z
publishDate 2008
recordtype eprints
repository_type Digital Repository
spelling usm-95832017-05-31T05:06:40Z http://eprints.usm.my/9583/ Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. Tan, Philip Beow Yew TK7800-8360 Electronics Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor. 2008-08 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf Tan, Philip Beow Yew (2008) Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. PhD thesis, Universiti Sains Malaysia.
spellingShingle TK7800-8360 Electronics
Tan, Philip Beow Yew
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_full Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_fullStr Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_full_unstemmed Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_short Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_sort compact modeling of deep submicron cmos transistor with shallow trench isolation mechanical stress effect [tk7871.99.m44 t161 2008 f rb].
topic TK7800-8360 Electronics
url http://eprints.usm.my/9583/
http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf