Fabrication And Characterization Of Ingan Based Solar Cell: From Material To Device
Indium gallium nitride (InGaN) material system has emerged as a promising candidate for high-efficiency solar cells due to its exceptional intrinsic properties. However, developing InGaN-based solar cells faces several challenges, including needing a p-doped layer and producing high-quality indium-r...
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| Format: | Thesis |
| Language: | English |
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2024
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| Online Access: | http://eprints.usm.my/63005/ http://eprints.usm.my/63005/1/Pages%20from%20AHMAD%20SAUFFI%20BIN%20YUSOF%20-%20TESIS.pdf |
| Summary: | Indium gallium nitride (InGaN) material system has emerged as a promising candidate for high-efficiency solar cells due to its exceptional intrinsic properties. However, developing InGaN-based solar cells faces several challenges, including needing a p-doped layer and producing high-quality indium-rich InGaN alloy. This study explores innovative strategies to overcome these challenges, focusing on the practical development of thick InxGa1-xN-based Schottky solar cells, from material growth to device characterization. |
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