Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate

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Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate

This project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and...

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Bibliographic Details
Main Author:	Alias, Ezzah Azimah
Format:	Thesis
Language:	English
Published:	2024
Subjects:	QD1-999 Chemistry
Online Access:	http://eprints.usm.my/62954/ http://eprints.usm.my/62954/1/Pages%20from%20EZZAH%20AZIMAH%20BINTI%20ALIAS%20-%20TESIS.pdf

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