Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate
This project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2024
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/62954/ http://eprints.usm.my/62954/1/Pages%20from%20EZZAH%20AZIMAH%20BINTI%20ALIAS%20-%20TESIS.pdf |
| _version_ | 1848885127778664448 |
|---|---|
| author | Alias, Ezzah Azimah |
| author_facet | Alias, Ezzah Azimah |
| author_sort | Alias, Ezzah Azimah |
| building | USM Institutional Repository |
| collection | Online Access |
| description | This project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and annealing the substrate before roughening. Thirdly, by roughening GaN substrate prior to LED growth. |
| first_indexed | 2025-11-15T19:17:40Z |
| format | Thesis |
| id | usm-62954 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T19:17:40Z |
| publishDate | 2024 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-629542025-10-14T07:21:35Z http://eprints.usm.my/62954/ Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate Alias, Ezzah Azimah QD1-999 Chemistry This project attempts to improve the performance of InGaN LEDs grown on GaN substrates. To achieve this goal, three frameworks were proposed. Firstly, by introducing GaN cap layer in multiquantum wells (MQWs). Secondly, by roughening backside (N-face) of GaN substrate using new etching solution and annealing the substrate before roughening. Thirdly, by roughening GaN substrate prior to LED growth. 2024-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/62954/1/Pages%20from%20EZZAH%20AZIMAH%20BINTI%20ALIAS%20-%20TESIS.pdf Alias, Ezzah Azimah (2024) Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate. PhD thesis, Universiti Sains Malaysia. |
| spellingShingle | QD1-999 Chemistry Alias, Ezzah Azimah Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate |
| title | Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate |
| title_full | Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate |
| title_fullStr | Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate |
| title_full_unstemmed | Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate |
| title_short | Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate |
| title_sort | indium gallium nitride based light emitting diode using pre-roughened backside (n-face) gallium nitride substrate |
| topic | QD1-999 Chemistry |
| url | http://eprints.usm.my/62954/ http://eprints.usm.my/62954/1/Pages%20from%20EZZAH%20AZIMAH%20BINTI%20ALIAS%20-%20TESIS.pdf |