Fabrication And Characterization Of Embedded Gold Nanoparticles In Metal Contacts For Silicon And Silicon Carbide-Based Devices
Embedding metal nanoparticles (NPs) into metal contacts, at the interface with semiconductor, is an alternative method for modification of Schottky barrier height (SBH) in electrical contacts and offers a tremendous simplification and adaptation in processing steps. Schottky barrier diodes with a...
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| Format: | Thesis |
| Language: | English |
| Published: |
2014
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| Online Access: | http://eprints.usm.my/62513/ http://eprints.usm.my/62513/1/24%20Pages%20from%2000001779845.pdf |
| Summary: | Embedding metal nanoparticles (NPs) into metal contacts, at the interface with
semiconductor, is an alternative method for modification of Schottky barrier height
(SBH) in electrical contacts and offers a tremendous simplification and adaptation in
processing steps. Schottky barrier diodes with aluminum (Al) contacts embedded
with gold (Au) NPs on n- and p-type silicon (Si) and silicon carbide (4H-SiC)
substrates were fabricated and their physical and electrical characteristics were
investigated. Based on the studies on Si surface contact angle measurement and the
negative zeta-potential values of seeded growth 20 nm Au NPs, an alternative
approach was proposed to deposit Au NPs on linker-free n- and p-Si substrates using
spin-coating technique. Density of NPs (determined by scanning electron
microscope) on n-Si was substantially higher than p-Si which was due to the
differences in surface properties of n- and p-Si. Current-voltage analysis of diodes
revealed an increase in current density in both bias directions due to NPs local
electric field enhancement effect and SBH lowering (0.1 1 eV for n- and 0.05 eV for
p-Si). The electrical results were then correlated to the structural properties of Al/Si
(determined by transmission electron microscope). Higher density of 5 and 10 nm Au
NPs were deposited on SiC surface by using acidification technique with diluted HF.
Al/4H-SiC diodes showed great improvement in SBH lowering (0.09 eV for n- and
0.24 eV for p-4H-SiC) and hence forward bias current density elevation while
maintaining the rectification properties in reverse bias. |
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