Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

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Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...

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Bibliographic Details
Main Author:	Samsudin, Muhammad Esmed Alif
Format:	Thesis
Language:	English
Published:	2023
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/61291/ http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf

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