Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...
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| Format: | Thesis |
| Language: | English |
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2023
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| Online Access: | http://eprints.usm.my/61291/ http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf |
| _version_ | 1848884670300684288 |
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| author | Samsudin, Muhammad Esmed Alif |
| author_facet | Samsudin, Muhammad Esmed Alif |
| author_sort | Samsudin, Muhammad Esmed Alif |
| building | USM Institutional Repository |
| collection | Online Access |
| description | This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattice period, and indium composition on InGaN based LED performance was studied. It was found that growing GaN nucleation at 570°C reduced threading dislocations (TDs) in the overgrown GaN layer (which served as the LED base layer). At 570°C nucleation, larger 3D growths (islands) formed, promoting dislocation inclination, and thus reducing TDs. Subsequently, 20 periods of In0.04Ga0.96N/GaN SLs led to reasonable V-pits size. This increased holes injection into the multiquantum well and hence, improved the LED performance. This research also attempted to find out factors which limit the use of GaN substrates in InGaN based LEDs development over sapphire substrates, particularly pattern sapphire substrate (PSS), which is widely used in many studies, including in this research. |
| first_indexed | 2025-11-15T19:10:24Z |
| format | Thesis |
| id | usm-61291 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T19:10:24Z |
| publishDate | 2023 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-612912024-10-15T00:49:27Z http://eprints.usm.my/61291/ Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition Samsudin, Muhammad Esmed Alif QC1 Physics (General) This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattice period, and indium composition on InGaN based LED performance was studied. It was found that growing GaN nucleation at 570°C reduced threading dislocations (TDs) in the overgrown GaN layer (which served as the LED base layer). At 570°C nucleation, larger 3D growths (islands) formed, promoting dislocation inclination, and thus reducing TDs. Subsequently, 20 periods of In0.04Ga0.96N/GaN SLs led to reasonable V-pits size. This increased holes injection into the multiquantum well and hence, improved the LED performance. This research also attempted to find out factors which limit the use of GaN substrates in InGaN based LEDs development over sapphire substrates, particularly pattern sapphire substrate (PSS), which is widely used in many studies, including in this research. 2023-03 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf Samsudin, Muhammad Esmed Alif (2023) Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition. PhD thesis, Perpustakaan Hamzah Sendut. |
| spellingShingle | QC1 Physics (General) Samsudin, Muhammad Esmed Alif Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition |
| title | Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition |
| title_full | Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition |
| title_fullStr | Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition |
| title_full_unstemmed | Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition |
| title_short | Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition |
| title_sort | epitaxial growth of iii-v nitrides based light emitting diodes by metal organic chemical vapor deposition |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/61291/ http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf |