Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications

This research investigates the morphological, structural, optical, and photoelectrochemical properties of In2O3 nanostructured films synthesized on Si(100) and Ni/Si(100) substrates using the chemical vapor deposition technique at atmospheric pressure under hydrogen reducing ambient, and carbotherma...

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Main Author: Moses, Aper Terwase
Format: Thesis
Language:English
Published: 2022
Subjects:
Online Access:http://eprints.usm.my/59185/
http://eprints.usm.my/59185/1/APER%20TERWASE%20MOSES%20-%20TESIS24.pdf
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author Moses, Aper Terwase
author_facet Moses, Aper Terwase
author_sort Moses, Aper Terwase
building USM Institutional Repository
collection Online Access
description This research investigates the morphological, structural, optical, and photoelectrochemical properties of In2O3 nanostructured films synthesized on Si(100) and Ni/Si(100) substrates using the chemical vapor deposition technique at atmospheric pressure under hydrogen reducing ambient, and carbothermal reduction, respectively. The properties of the synthesized films were studied under several growth conditions such as; temperature, gas flow rates, and post-annealing under ammonia ambient. Analysis revealed changes in the surface morphology of the films with variations in growth conditions. EDX measurements showed non-stoichiometric in all the films with an In/O atomic ratio above the stoichiometric value of 0.667, which indicates oxygen deficiency. XRD analysis confirmed the formation of highly crystalline indium oxide nanostructures of the body-centered cubic (bcc) crystal structure with predominate growth in the (222) plane. Samples optical bandgap variation with growth conditions was also observed from analysis of reflectance data. Annealing under ammonia ambient resulted in the formation of N-doped In2O3 nanostructured materials. The photoelectrochemical study performed in a 0.5 M KOH solution revealed an onset potential of 0.72 (V vs. Ag/AgCl) for photoanodic current in the electrodes fabricated under hydrogen reducing ambient with the most efficient photoanode (fabricated at 950 oC), generating a maximum photocurrent density of 2.56 (mA/cm2)
first_indexed 2025-11-15T19:01:27Z
format Thesis
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institution Universiti Sains Malaysia
institution_category Local University
language English
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publishDate 2022
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spelling usm-591852023-08-18T08:11:30Z http://eprints.usm.my/59185/ Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications Moses, Aper Terwase QC1 Physics (General) This research investigates the morphological, structural, optical, and photoelectrochemical properties of In2O3 nanostructured films synthesized on Si(100) and Ni/Si(100) substrates using the chemical vapor deposition technique at atmospheric pressure under hydrogen reducing ambient, and carbothermal reduction, respectively. The properties of the synthesized films were studied under several growth conditions such as; temperature, gas flow rates, and post-annealing under ammonia ambient. Analysis revealed changes in the surface morphology of the films with variations in growth conditions. EDX measurements showed non-stoichiometric in all the films with an In/O atomic ratio above the stoichiometric value of 0.667, which indicates oxygen deficiency. XRD analysis confirmed the formation of highly crystalline indium oxide nanostructures of the body-centered cubic (bcc) crystal structure with predominate growth in the (222) plane. Samples optical bandgap variation with growth conditions was also observed from analysis of reflectance data. Annealing under ammonia ambient resulted in the formation of N-doped In2O3 nanostructured materials. The photoelectrochemical study performed in a 0.5 M KOH solution revealed an onset potential of 0.72 (V vs. Ag/AgCl) for photoanodic current in the electrodes fabricated under hydrogen reducing ambient with the most efficient photoanode (fabricated at 950 oC), generating a maximum photocurrent density of 2.56 (mA/cm2) 2022-05 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/59185/1/APER%20TERWASE%20MOSES%20-%20TESIS24.pdf Moses, Aper Terwase (2022) Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications. PhD thesis, Universiti Sains Malaysia.
spellingShingle QC1 Physics (General)
Moses, Aper Terwase
Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_full Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_fullStr Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_full_unstemmed Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_short Growth And Characterization Of Indium Oxide Nanostructured Films Using Solid-to-vapor Deposition Technique For Photoelectrochemical Applications
title_sort growth and characterization of indium oxide nanostructured films using solid-to-vapor deposition technique for photoelectrochemical applications
topic QC1 Physics (General)
url http://eprints.usm.my/59185/
http://eprints.usm.my/59185/1/APER%20TERWASE%20MOSES%20-%20TESIS24.pdf