Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose...
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| Format: | Thesis |
| Language: | English |
| Published: |
2022
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| Online Access: | http://eprints.usm.my/59120/ http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf |
| _version_ | 1848884090689814528 |
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| author | Ahmed Ali, Amal Mohamed |
| author_facet | Ahmed Ali, Amal Mohamed |
| author_sort | Ahmed Ali, Amal Mohamed |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Real time dosimetry is a major challenge in medical, industrial and education
fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect
transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is
being developed in a different study to measure the dose delivered to the tissue layers.
This thesis will discuss the development of a new type of radiation detector based on
the characteristics of different metal oxide materials, and a new model of radiation
detector, known as extended gate field-effect transistor (EGFET) and the optimization
of the operating conditions. |
| first_indexed | 2025-11-15T19:01:11Z |
| format | Thesis |
| id | usm-59120 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T19:01:11Z |
| publishDate | 2022 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-591202023-08-15T01:01:21Z http://eprints.usm.my/59120/ Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range Ahmed Ali, Amal Mohamed QC1 Physics (General) Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. This thesis will discuss the development of a new type of radiation detector based on the characteristics of different metal oxide materials, and a new model of radiation detector, known as extended gate field-effect transistor (EGFET) and the optimization of the operating conditions. 2022-02 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf Ahmed Ali, Amal Mohamed (2022) Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range. PhD thesis, Perpustakaan Hamzah Sendut. |
| spellingShingle | QC1 Physics (General) Ahmed Ali, Amal Mohamed Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range |
| title | Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range |
| title_full | Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range |
| title_fullStr | Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range |
| title_full_unstemmed | Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range |
| title_short | Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range |
| title_sort | zno based extended gate field effect transistor (egfet) dosimeter fabrication with dopant elements of pb, al and bi for x-ray in diagnostic energy range |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/59120/ http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf |