Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology

The low noise amplifier (LNA) for Ultra Wideband (UWB) mode 1 application, which is covering a frequency range from 3.1 GHz to 4.9 GHz. LNA is the first gain element in the receiver architecture. It is designed for Direct Conversion (DICON). Based on these system characteristics, inductive deg...

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Main Author: Ooi, Wei Ching
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2006
Subjects:
Online Access:http://eprints.usm.my/58618/
http://eprints.usm.my/58618/1/Design%20Of%20Low%20Noise%20Amplifier%20For%20Ultra-Wideband%20%28UWB%29%20Applications%20Using%20Silterra%200.18%20%CE%BCm%20Cmos%20Technology_Ooi%20Wei%20Ching.pdf
_version_ 1848883946999250944
author Ooi, Wei Ching
author_facet Ooi, Wei Ching
author_sort Ooi, Wei Ching
building USM Institutional Repository
collection Online Access
description The low noise amplifier (LNA) for Ultra Wideband (UWB) mode 1 application, which is covering a frequency range from 3.1 GHz to 4.9 GHz. LNA is the first gain element in the receiver architecture. It is designed for Direct Conversion (DICON). Based on these system characteristics, inductive degenerated common source LNA was designed using Silterra 0.18 μm process. UWB system with multi band Orthogonal Frequency Division Multiplexing (MBOA) was chosen over Direct Sequence Spread Spectrum (DSSS) due to its full optimization of the allocated 7.5 GHz bandwidth. This LNA consumes 5.9 mA of total current from a 1.8 V dc power supply. LNA is designed using inductive degenerated common source amplifier, which is widely used in narrow band design. For UWB application such as wideband matching was implemented to extend the bandwidths of a narrow band system. In this project, wideband reactive matching following by LC Chebyshev band pass filter is utilized. The LC band pass filter utilizes the transformation from low pass network to band pass network is presented. Impedance and frequency scaling are used in filter transformation from a low pass filter to a band pass filter. The wideband filter, as input matching network, is designed on chip for better integration. Three test cases were carried out using LNA with ideal inductors, ASITIC inductors and SIL18RF inductors. For the ideal LNA, higher power consumption of 11.25 mW is observed at 1.9 GHz bandwidth, 14.1 dB power gain with gain flatness of ±0.25 dB, input and output match of -10 dB over its frequency range, noise figure of 2.9 dB and third order intercept point of -6.2 dBm with ideal inductors is . However, using ASITIC inductor, the gain of LNA is dropped to 13.2 dB with gain flatness of ± 1.5 dB exhibiting higher noise figure of less than 6 dB with the same input and output matching and comparable third order intercept point. On the other hand, using SIL18RF inductor, the gain of LNA is further decreased to 8.5 dB, exhibiting noise figure of less than 4.3 dB with poorer input and output matching of -9.5 dB and -6.1 dB, respectively. Measurements were carried out on MAX 2654 evaluation kit at a frequency scaling of 1.6 GHz, exhibiting a 9 dB gain, input and output match of -7 dB and -14 dB, respectively and higher power consumption, 15 mW.
first_indexed 2025-11-15T18:58:54Z
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id usm-58618
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T18:58:54Z
publishDate 2006
publisher Universiti Sains Malaysia
recordtype eprints
repository_type Digital Repository
spelling usm-586182023-05-19T01:58:28Z http://eprints.usm.my/58618/ Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology Ooi, Wei Ching T Technology TK Electrical Engineering. Electronics. Nuclear Engineering The low noise amplifier (LNA) for Ultra Wideband (UWB) mode 1 application, which is covering a frequency range from 3.1 GHz to 4.9 GHz. LNA is the first gain element in the receiver architecture. It is designed for Direct Conversion (DICON). Based on these system characteristics, inductive degenerated common source LNA was designed using Silterra 0.18 μm process. UWB system with multi band Orthogonal Frequency Division Multiplexing (MBOA) was chosen over Direct Sequence Spread Spectrum (DSSS) due to its full optimization of the allocated 7.5 GHz bandwidth. This LNA consumes 5.9 mA of total current from a 1.8 V dc power supply. LNA is designed using inductive degenerated common source amplifier, which is widely used in narrow band design. For UWB application such as wideband matching was implemented to extend the bandwidths of a narrow band system. In this project, wideband reactive matching following by LC Chebyshev band pass filter is utilized. The LC band pass filter utilizes the transformation from low pass network to band pass network is presented. Impedance and frequency scaling are used in filter transformation from a low pass filter to a band pass filter. The wideband filter, as input matching network, is designed on chip for better integration. Three test cases were carried out using LNA with ideal inductors, ASITIC inductors and SIL18RF inductors. For the ideal LNA, higher power consumption of 11.25 mW is observed at 1.9 GHz bandwidth, 14.1 dB power gain with gain flatness of ±0.25 dB, input and output match of -10 dB over its frequency range, noise figure of 2.9 dB and third order intercept point of -6.2 dBm with ideal inductors is . However, using ASITIC inductor, the gain of LNA is dropped to 13.2 dB with gain flatness of ± 1.5 dB exhibiting higher noise figure of less than 6 dB with the same input and output matching and comparable third order intercept point. On the other hand, using SIL18RF inductor, the gain of LNA is further decreased to 8.5 dB, exhibiting noise figure of less than 4.3 dB with poorer input and output matching of -9.5 dB and -6.1 dB, respectively. Measurements were carried out on MAX 2654 evaluation kit at a frequency scaling of 1.6 GHz, exhibiting a 9 dB gain, input and output match of -7 dB and -14 dB, respectively and higher power consumption, 15 mW. Universiti Sains Malaysia 2006-05-01 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/58618/1/Design%20Of%20Low%20Noise%20Amplifier%20For%20Ultra-Wideband%20%28UWB%29%20Applications%20Using%20Silterra%200.18%20%CE%BCm%20Cmos%20Technology_Ooi%20Wei%20Ching.pdf Ooi, Wei Ching (2006) Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Elektrik dan Elektronik. (Submitted)
spellingShingle T Technology
TK Electrical Engineering. Electronics. Nuclear Engineering
Ooi, Wei Ching
Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology
title Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology
title_full Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology
title_fullStr Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology
title_full_unstemmed Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology
title_short Design Of Low Noise Amplifier For Ultra-Wideband (UWB) Applications Using Silterra 0.18 μm Cmos Technology
title_sort design of low noise amplifier for ultra-wideband (uwb) applications using silterra 0.18 μm cmos technology
topic T Technology
TK Electrical Engineering. Electronics. Nuclear Engineering
url http://eprints.usm.my/58618/
http://eprints.usm.my/58618/1/Design%20Of%20Low%20Noise%20Amplifier%20For%20Ultra-Wideband%20%28UWB%29%20Applications%20Using%20Silterra%200.18%20%CE%BCm%20Cmos%20Technology_Ooi%20Wei%20Ching.pdf