Investigation Of Phosphorus Spin On Dopant On SOI Wafer
Silicon on insulator (SOI) wafer has made it possible for the integrated circuit sector to develop superior, high-performance of semiconductor device and doping techniques are essential in forming the PN junction for semiconductor device. There are two most common doping techniques which is chemic...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2022
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| Online Access: | http://eprints.usm.my/56691/ http://eprints.usm.my/56691/1/Investigation%20Of%20Phosphorus%20Spin%20On%20Dopant%20On%20SOI%20Wafer_Tang%20Yi%20Tian.pdf |
| _version_ | 1848883422799331328 |
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| author | Tang, Yi Tian |
| author_facet | Tang, Yi Tian |
| author_sort | Tang, Yi Tian |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Silicon on insulator (SOI) wafer has made it possible for the integrated circuit sector to develop superior, high-performance of semiconductor device and doping techniques are essential in forming the PN junction for semiconductor device. There
are two most common doping techniques which is chemical vapour deposition and ion implantation. In this research study new doping method which is thermal diffusion using spin on dopant is introduced. The spin on dopant technique is an alternative
technique that involves spinning a dopant-containing solution onto silicon on insulator wafers. The aim of this research work is to investigate the effect of thermal diffusion
temperature and soaking time on its sheet resistance. In addition, doping uniformity also been investigated by using mapping techniques. Three inches boron-doped silicon
on insulator wafer were cut and undergo Radio Corporation of America (RCA) standard cleaning. Filmtronics spin on dopant (SOD) P509 served as N-type dopants placed on silicon on insulator wafer for 40 seconds at 4,000 rpm using a spin coater. Thermal diffusion temperature and soaking time were set from 700oC to 1000oC and 30 to 120 minutes, respectively. After thermal diffusion, samples were etched with hydrofluoric acid (HF). All samples were characterized by four point probe, Hall
Effect and Atomic Force Microscopy (AFM). The increase of thermal diffusion soaking time reduces sheet resistance until activated dopants are saturated at 900°C. When sheet resistance decreased, the concentration of dopants increased. Temperature
and soaking time enhanced the carrier density and surface roughness but reduced Hall mobility. Mapping techniques showed that low non-uniformity value which was less than 10% suggested good thermal diffusion control. |
| first_indexed | 2025-11-15T18:50:34Z |
| format | Monograph |
| id | usm-56691 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:50:34Z |
| publishDate | 2022 |
| publisher | Universiti Sains Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-566912023-01-31T07:49:53Z http://eprints.usm.my/56691/ Investigation Of Phosphorus Spin On Dopant On SOI Wafer Tang, Yi Tian T Technology TN Mining Engineering. Metallurgy Silicon on insulator (SOI) wafer has made it possible for the integrated circuit sector to develop superior, high-performance of semiconductor device and doping techniques are essential in forming the PN junction for semiconductor device. There are two most common doping techniques which is chemical vapour deposition and ion implantation. In this research study new doping method which is thermal diffusion using spin on dopant is introduced. The spin on dopant technique is an alternative technique that involves spinning a dopant-containing solution onto silicon on insulator wafers. The aim of this research work is to investigate the effect of thermal diffusion temperature and soaking time on its sheet resistance. In addition, doping uniformity also been investigated by using mapping techniques. Three inches boron-doped silicon on insulator wafer were cut and undergo Radio Corporation of America (RCA) standard cleaning. Filmtronics spin on dopant (SOD) P509 served as N-type dopants placed on silicon on insulator wafer for 40 seconds at 4,000 rpm using a spin coater. Thermal diffusion temperature and soaking time were set from 700oC to 1000oC and 30 to 120 minutes, respectively. After thermal diffusion, samples were etched with hydrofluoric acid (HF). All samples were characterized by four point probe, Hall Effect and Atomic Force Microscopy (AFM). The increase of thermal diffusion soaking time reduces sheet resistance until activated dopants are saturated at 900°C. When sheet resistance decreased, the concentration of dopants increased. Temperature and soaking time enhanced the carrier density and surface roughness but reduced Hall mobility. Mapping techniques showed that low non-uniformity value which was less than 10% suggested good thermal diffusion control. Universiti Sains Malaysia 2022-08-15 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/56691/1/Investigation%20Of%20Phosphorus%20Spin%20On%20Dopant%20On%20SOI%20Wafer_Tang%20Yi%20Tian.pdf Tang, Yi Tian (2022) Investigation Of Phosphorus Spin On Dopant On SOI Wafer. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Bahan dan Sumber Mineral. (Submitted) |
| spellingShingle | T Technology TN Mining Engineering. Metallurgy Tang, Yi Tian Investigation Of Phosphorus Spin On Dopant On SOI Wafer |
| title | Investigation Of Phosphorus Spin On Dopant On SOI Wafer |
| title_full | Investigation Of Phosphorus Spin On Dopant On SOI Wafer |
| title_fullStr | Investigation Of Phosphorus Spin On Dopant On SOI Wafer |
| title_full_unstemmed | Investigation Of Phosphorus Spin On Dopant On SOI Wafer |
| title_short | Investigation Of Phosphorus Spin On Dopant On SOI Wafer |
| title_sort | investigation of phosphorus spin on dopant on soi wafer |
| topic | T Technology TN Mining Engineering. Metallurgy |
| url | http://eprints.usm.my/56691/ http://eprints.usm.my/56691/1/Investigation%20Of%20Phosphorus%20Spin%20On%20Dopant%20On%20SOI%20Wafer_Tang%20Yi%20Tian.pdf |