Investigation Of Boron Spin On Dopant On SOI Wafer

Investigation Of Boron Spin On Dopant On SOI Wafer

In this research, works were focused on the doping technique of p-type SOI wafers by using thermal diffusion process. The aim of this research was to prepare doped of p-type SOI wafer by SOD with boron dopant. This method is used to provide an impurity source for SOI wafer. The dopant was first sp...

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Bibliographic Details
Main Author: Bahaudin, Aishah Shamimi
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2022
Subjects:
T Technology
TN Mining Engineering. Metallurgy
Online Access:http://eprints.usm.my/56433/
http://eprints.usm.my/56433/1/Investigation%20Of%20Boron%20Spin%20On%20Dopant%20On%20Soi%20Wafer_Aishah%20Shamimi%20Bahaudin.pdf

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