Physical Modeling Of Multi Quantum Well (MQW) P-I-N InGaAs InAlAs Solar Cell

QR Code

Physical Modeling Of Multi Quantum Well (MQW) P-I-N InGaAs InAlAs Solar Cell

Multi Quantum Well Solar Cell is an advanced improvement of the conventional solar cell to overcome problem encounter in a normal solar cell. In a normal solar cell, the photon energy absorption rate is low causing the electron absorption rate to be low directly. A lower electron absorption result...

Full description

Bibliographic Details
Main Author:	Muniappan, Logaruthran
Format:	Monograph
Language:	English
Published:	Universiti Sains Malaysia 2018
Subjects:	T Technology TK Electrical Engineering. Electronics. Nuclear Engineering
Online Access:	http://eprints.usm.my/53606/ http://eprints.usm.my/53606/1/Physical%20Modeling%20Of%20Multi%20Quantum%20Well%20%28MQW%29%20P-I-N%20InGaAs%20InAlAs%20Solar%20Cell_Logaruthran%20Muniappan_E3_2018.pdf

Similar Items

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
by: Gordo, V. Orsi, et al.
Published: (2017)

Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
by: Lee, Mei Yee, et al.
Published: (2020)

Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications
by: Mat Jubadi, Warsuzarina
Published: (2015)

Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
by: Czerniuk, T., et al.
Published: (2017)

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique
by: Al Saqri, Noor alhuda, et al.
Published: (2016)

Microstructural origins of localization in InGaN quantum wells
by: Oliver, R., et al.
Published: (2010)

Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
by: Phelan, R., et al.
Published: (2010)

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
by: Rodrigues, D.H., et al.
Published: (2016)

Simulation of High Performance Quantum Well GaN-based LED
by: Hassan, Z., et al.
Published: (2005)

Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
by: Zainal, N., et al.
Published: (2014)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Modelling of stark effect in InAs-AlGaSb multi-quantum wells
by: Geri Kibe AK Gopir,
Published: (2000)

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
by: Bennett, S., et al.
Published: (2011)

Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength
by: Megat Hasnan, M. M. I., et al.
Published: (2022)

Simulation of performance on multi-quantum-well violet InGaN laser diode and analysis of its output for digital modulation
by: Abdullah, Rafid A.
Published: (2010)

Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
by: Rais, Shamsul Amir Abdul, et al.

Enhancement of nano-RC switching delay due to the resistance blow-up in ingaas
by: Ismail, Razali, et al.
Published: (2007)

Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
by: Ahmad Fauzi, D., et al.
Published: (2015)

Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
by: Jasim, Farah Z.
Published: (2011)

Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures
by: Sanchez, A. M., et al.
Published: (2009)

Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers
by: Tandoi, G., et al.
Published: (2012)

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
by: Al Humayun, Md. Abdullah, et al.
Published: (2017)

Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2020)

Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes
by: Sahar, Mohd Ann Amirul Zulffiqal Md, et al.
Published: (2020)

Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
by: Podolska, Anna, et al.
Published: (2010)

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser
by: Tandoi, G., et al.
Published: (2011)

Subpicosecond colliding pulse mode locking at 126 GHz in monolithic GaAs/AlGaAs quantum well lasers: Experiments and theory
by: Tandoi, G., et al.
Published: (2013)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Three-dimensional atom probe analysis of green- and blue-emitting In x Ga1-x NGaN multiple quantum well structures
by: Galtrey, M., et al.
Published: (2008)

Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes
by: Gunes, Mustafa, et al.
Published: (2017)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N. M., et al.
Published: (2020)

Properties of p-GaN Layer on Different Nitride Surfaces
by: Fatihah, N., et al.
Published: (2015)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N.M., et al.
Published: (2020)

Supporting information for InP-InxGa1-x as core-multi-shell nanowire quantum wells with tunable emission in the 1.3 – 1.55 μm wavelength range
by: Fonseka, H. A., et al.
Published: (2017)

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
by: Maneea Eizadi Sharifabad,, et al.
Published: (2011)