High Resistivity Silicon- Deep-Level Doping Compensation Using Elemental Gold

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High Resistivity Silicon- Deep-Level Doping Compensation Using Elemental Gold

The rapid development of high speed devices increases the need for high resistivity substrate to improve noise isolation. The traditional method of using III-V semiconductor material for the substrate is associated with the problem of fabrication cost and complexity. Alternative solution such as sil...

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Bibliographic Details
Main Author:	Lew, Yit Shien
Format:	Monograph
Language:	English
Published:	Universiti Sains Malaysia 2017
Subjects:	T Technology TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Online Access:	http://eprints.usm.my/53152/ http://eprints.usm.my/53152/1/High%20Resistivity%20Silicon-%20Deep-Level%20Doping%20Compensation%20Using%20Elemental%20Gold_Lew%20Yit%20Shien_E3_2017.pdf

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